Raman thermography comparison

Raman thermography comparison

In a side-by-side Raman thermography tests [4,6], GaN-on-Diamond transistors showed a 40% (right box) and 80% (left box) reduction in gate temperature compared to GaN-on-SiC and GaN-on-Silicon respectively. This thermal reduction remained at 80% (blue vs. red line, left box) when compared to a GaN-on-Diamond with dislocation layers still embedded.